2SK3070S - Hitachi Semiconductor

2SK3070S N-Channel MOSFET

2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum.

Features

• Low on-resistance R DS(on) = 4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg Note 3 Note 3 Note 2 Note 1 Ratings 40 ±20 75 300 75 50 333 100 .