2SK3055 - NEC

2SK3055 N-Channel MOSFET

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °.

Features

• Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 +20, −10 ±30 ±100 25 2.0 150
  –55 to +150 15 22.5 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Te.