The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. ORDERING INFORMATION PART NUMBER 2SK3053 PACKAGE Isolated TO-220 FEATURES • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP. • Buil.
• Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A)
• Low Ciss : Ciss = 790 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
Note2 Note2
60 ±20 +20, −10 ±25 ±75 30 2.0 150
–55 to +150 12.5 15.6
V V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3050 |
Rohm |
Small switching Transistors | |
2 | 2SK3051 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK3054 |
NEC |
N-Channel MOSFET | |
4 | 2SK3054C |
Renesas |
N-CHANNEL MOSFET | |
5 | 2SK3055 |
NEC |
N-Channel MOSFET | |
6 | 2SK3056 |
NEC |
N-Channel MOSFET | |
7 | 2SK3057 |
NEC |
N-Channel MOSFET | |
8 | 2SK3058 |
NEC |
N-Channel MOSFET | |
9 | 2SK300 |
Sony Corporation |
N-Channel Silicon MOSFET | |
10 | 2SK3000 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
11 | 2SK3000 |
Renesas Technology |
Silicon N Channel MOS FET | |
12 | 2SK3001 |
Hitachi Semiconductor |
GaAs HEMT Low Noise Amplifier |