2SK3050 Transistors Small switching (600V, 2A) 2SK3050 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) 1.5±0.3 6.5±0.2 0.2 5.1 + −0.1 C0.5 0.2 2.3 + −0.1 0.5±0.1 0.7.
1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) 1.5±0.3 6.5±0.2 0.2 5.1 + −0.1 C0.5 0.2 2.3 + −0.1 0.5±0.1 0.75 0.9 0.65±0.1 0.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2 zStructure Silicon N-channel MOSFET zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ PD Total power dissipati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3051 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK3053 |
NEC |
N-Channel MOSFET | |
3 | 2SK3054 |
NEC |
N-Channel MOSFET | |
4 | 2SK3054C |
Renesas |
N-CHANNEL MOSFET | |
5 | 2SK3055 |
NEC |
N-Channel MOSFET | |
6 | 2SK3056 |
NEC |
N-Channel MOSFET | |
7 | 2SK3057 |
NEC |
N-Channel MOSFET | |
8 | 2SK3058 |
NEC |
N-Channel MOSFET | |
9 | 2SK300 |
Sony Corporation |
N-Channel Silicon MOSFET | |
10 | 2SK3000 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
11 | 2SK3000 |
Renesas Technology |
Silicon N Channel MOS FET | |
12 | 2SK3001 |
Hitachi Semiconductor |
GaAs HEMT Low Noise Amplifier |