logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Preview

2SK3050 - Rohm

Download Datasheet
Stock / Price

2SK3050 Small switching Transistors

2SK3050 Transistors Small switching (600V, 2A) 2SK3050 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) 1.5±0.3 6.5±0.2 0.2 5.1 + −0.1 C0.5 0.2 2.3 + −0.1 0.5±0.1 0.7.

Features

1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) 1.5±0.3 6.5±0.2 0.2 5.1 + −0.1 C0.5 0.2 2.3 + −0.1 0.5±0.1 0.75 0.9 0.65±0.1 0.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2 zStructure Silicon N-channel MOSFET zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ PD Total power dissipati.

Related Product

No. Partie # Fabricant Description Fiche Technique
1 2SK3051
Toshiba Semiconductor
N-Channel MOSFET Datasheet
2 2SK3053
NEC
N-Channel MOSFET Datasheet
3 2SK3054
NEC
N-Channel MOSFET Datasheet
4 2SK3054C
Renesas
N-CHANNEL MOSFET Datasheet
5 2SK3055
NEC
N-Channel MOSFET Datasheet
6 2SK3056
NEC
N-Channel MOSFET Datasheet
7 2SK3057
NEC
N-Channel MOSFET Datasheet
8 2SK3058
NEC
N-Channel MOSFET Datasheet
9 2SK300
Sony Corporation
N-Channel Silicon MOSFET Datasheet
10 2SK3000
Hitachi Semiconductor
Silicon N Channel MOS FET Datasheet
11 2SK3000
Renesas Technology
Silicon N Channel MOS FET Datasheet
12 2SK3001
Hitachi Semiconductor
GaAs HEMT Low Noise Amplifier Datasheet
More datasheet from Rohm
Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact