2SK2729 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings REJ03G1027-0300 (Previous: ADE-208-455A) Rev.3.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3 Rev.3.00 Sep 07, 2.
• Low on-resistance
• High speed switching
• Low drive current
• Avalanche ratings
REJ03G1027-0300 (Previous: ADE-208-455A)
Rev.3.00 Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate
G
2. Drain
(Flange)
3. Source
1 2
S
3
Rev.3.00 Sep 07, 2005 page 1 of 7
2SK2729
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %.
2SK2729 Silicon N Channel MOS FET High Speed Power Switching ADE-208-455 A 2nd. Edition Features • • • • Low on-resista.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2723 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
2 | 2SK2724 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
3 | 2SK2725 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2725 |
Renesas |
Silicon N-Channel MOSFET | |
5 | 2SK2726 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2726 |
Renesas |
Silicon N-Channel MOSFET | |
7 | 2SK2727 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2727 |
Renesas |
Silicon N-Channel MOSFET | |
9 | 2SK2728 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK2728 |
Renesas |
Silicon N-Channel MOSFET | |
11 | 2SK270 |
Toshiba |
Silicon N-Channel Transistor | |
12 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET |