2SK2724 - NEC

2SK2724 SWITCHING N-CHANNEL POWER MOS FET

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 10.0 ±0.3 FEATURES • Low On-Resistance 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A) • Low Ciss Ciss =1 200 pF .

Features

• Low On-Resistance 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)
• Low Ciss Ciss =1 200 pF Typ.
• Built-in G-S Protection Diode
• Isolated TO-220 package 15.0 ±0.3 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
* Total Power Dissipation (TA = 25 ˚C) Total Power Dissipation (TC = 25 ˚C) Channel Temperature Storage Temperature
* PW ≤ 10 µs, duty .