This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 • Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. • Low Ciss • Built-in G-S Protection Diode • Isolated TO-220 Package 0.7 ± 0.1 2.54 1.3 ± 0..
2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source
1 2 3
MP-45F (ISOLATED TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (TA = 25 °C) Total Power Dissipation (Tc = 25 °C) Channel Temperature Storage Temperature
*PW ≤ 10 µs, Duty Cycle ≤ 1% The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage may be applied to this.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2724 |
![]() NEC |
SWITCHING N-CHANNEL POWER MOS FET |
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2 | 2SK2725 |
![]() Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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3 | 2SK2725 |
![]() Renesas |
Silicon N-Channel MOSFET |
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4 | 2SK2726 |
![]() Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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5 | 2SK2726 |
![]() Renesas |
Silicon N-Channel MOSFET |
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6 | 2SK2727 |
![]() Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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7 | 2SK2727 |
![]() Renesas |
Silicon N-Channel MOSFET |
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8 | 2SK2728 |
![]() Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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9 | 2SK2728 |
![]() Renesas |
Silicon N-Channel MOSFET |
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10 | 2SK2729 |
![]() Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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11 | 2SK2729 |
![]() Renesas |
Silicon N-Channel MOSFET |
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12 | 2SK270 |
![]() Toshiba |
Silicon N-Channel Transistor |
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