2SK2723 - NEC

2SK2723 SWITCHING N-CHANNEL POWER MOS FET

This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 • Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. • Low Ciss • Built-in G-S Protection Diode • Isolated TO-220 Package 0.7 ± 0.1 2.54 1.3 ± 0..

Features

2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (ISOLATED TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (TA = 25 °C) Total Power Dissipation (Tc = 25 °C) Channel Temperature Storage Temperature
*PW ≤ 10 µs, Duty Cycle ≤ 1% The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage may be applied to this.