2SK270 SILICON MONOLITHIC N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES . 1 Chip Dual Type. . Recommended for First Differential Stages of DC Amplifiers. . Very High Yf I s1 : iYf s l=20mS(Typ.) (VDS=10V, Vgs=0, f=lkHz, I DS S=3mA) . Good Pair Characteristics : lVGSl-VGS2l=30mV(Max.)(VDS=10V, lD=lmA.
. 1 Chip Dual Type. . Recommended for First Differential Stages of DC Amplifiers. . Very High Yf I s1 : iYf s l=20mS(Typ.) (VDS=10V, Vgs=0, f=lkHz, I DS S=3mA) . Good Pair Characteristics : lVGSl-VGS2l=30mV(Max.)(VDS=10V, lD=lmA) . High Breakdown Voltage : VGDS=_ 40(Min. . Very Low Noise : NF=0. 5dB(Typ. (VDS =10V, lD=lmA, R g =lkQ, f=lkHz) . High Input Impedance : lGSS =- 10nA(Max. (Vgs =- 30V) . Complementary to 2SJ90 . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation SYMBOL VGDS IG PD Junction Temperature Storage Temperatu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK2701 |
Sanken electric |
MOSFET | |
3 | 2SK2701A |
INCHANGE |
N-Channel MOSFET | |
4 | 2SK2702 |
Sanken electric |
MOSFET | |
5 | 2SK2703 |
Sanken electric |
MOSFET | |
6 | 2SK2704 |
Sanken electric |
MOSFET | |
7 | 2SK2705 |
Sanken electric |
MOSFET | |
8 | 2SK2706 |
Sanken electric |
MOSFET | |
9 | 2SK2707 |
Sanken electric |
MOSFET | |
10 | 2SK2708 |
Sanken electric |
MOSFET | |
11 | 2SK2709 |
Sanken electric |
MOSFET | |
12 | 2SK2710 |
Sanken electric |
MOSFET |