2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS =.
pplication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2710 |
Sanken electric |
MOSFET | |
2 | 2SK2711 |
Rohm |
Transistor | |
3 | 2SK2713 |
Rohm |
Transistor | |
4 | 2SK2715 |
Rohm |
Switching Transistor | |
5 | 2SK2717 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2719 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor | |
7 | 2SK270 |
Toshiba |
Silicon N-Channel Transistor | |
8 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK2701 |
Sanken electric |
MOSFET | |
10 | 2SK2701A |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2702 |
Sanken electric |
MOSFET | |
12 | 2SK2703 |
Sanken electric |
MOSFET |