2SK2710 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 600 ± 30 ± 12 ± 48 85 (Tc = 25ºC) 400 12 150 –55 to +150 (Ta = 25ºC) External dimensions 2 ...... FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 7.5 3.0 11 0..
= 10V
RDS (ON) (Ω)
8
I D (A)
I D (A)
0.3
6 5V 4 2 0
6 4 2 0
TC =
– 55ºC 25ºC 125ºC
0.2 0.1 0
VGS = 4.5V 0 5 10 15 20
0
2
4
6
8
0
2
4
6
8
10
12
VDS (V)
VGS (V)
I D (A)
I D — Re (yfs) Characteristics
20 VDS = 20V 10 TC =
– 55ºC 25ºC 125ºC 8 10
VGS — VDS Characteristics
1.2 1.0
TC — RDS (ON) Characteristics
ID = 6A VGS = 10V
VDS (V)
6
ID = 12A
RDS (ON) (Ω)
20
Re (yfs) (S)
5
0.8 0.6 0.4 0.2 0
4 ID = 6A 2
1 0.5 0.3 0.05 0.1 0 0.5 1 5 12 4 5 10
–50
0
50
100
150
I D (A)
VGS (V)
Tc (ºC)
VDS — Capacitance Characteristics
10000 5000 VGS = 0V f = 1MHz Ciss 10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2711 |
Rohm |
Transistor | |
2 | 2SK2713 |
Rohm |
Transistor | |
3 | 2SK2715 |
Rohm |
Switching Transistor | |
4 | 2SK2717 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2718 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor | |
6 | 2SK2719 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor | |
7 | 2SK270 |
Toshiba |
Silicon N-Channel Transistor | |
8 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK2701 |
Sanken electric |
MOSFET | |
10 | 2SK2701A |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2702 |
Sanken electric |
MOSFET | |
12 | 2SK2703 |
Sanken electric |
MOSFET |