2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode : Vth = 2.0~4.0 V .
istance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.78 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate−source breakdown voltage Drain cut−off cur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2710 |
Sanken electric |
MOSFET | |
2 | 2SK2711 |
Rohm |
Transistor | |
3 | 2SK2713 |
Rohm |
Transistor | |
4 | 2SK2715 |
Rohm |
Switching Transistor | |
5 | 2SK2718 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor | |
6 | 2SK2719 |
Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor | |
7 | 2SK270 |
Toshiba |
Silicon N-Channel Transistor | |
8 | 2SK2700 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK2701 |
Sanken electric |
MOSFET | |
10 | 2SK2701A |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2702 |
Sanken electric |
MOSFET | |
12 | 2SK2703 |
Sanken electric |
MOSFET |