Ordering number : ENN5443A Features • Low ON-resistance. • Low Qg. 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Package Dimensions unit : mm 2078C [2SK2617LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C 123 2.55 2.55 1 : Gat.
• Low ON-resistance.
• Low Qg.
2SK2617LS
N-Channl Silicon MOSFET
2SK2617LS
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm 2078C
[2SK2617LS]
10.0 3.2
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2
1.2
2.4 14.0
0.75 0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
123 2.55 2.55
1 : Gate 2 : Drain 3 : Source
SANYO : TO-220FI(LS)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Electrical Characterist.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2617ALS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
2 | 2SK2610 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2611 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2611 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET | |
5 | 2SK2611 |
INCHANGE |
N-Channel MOSFET | |
6 | 2SK2611 |
nELL |
N-Channel Power MOSFET | |
7 | 2SK2613 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK2614 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK2615 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK2616 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
11 | 2SK2618ALS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2618LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |