Ordering number:ENN5620B N-Channel Silicon MOSFET 2SK2616 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2083B [2SK2616] 1.5 6.5 5.0 4 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SK2616] 6.5 5.0 4 2.3.
· Low ON-resistance.
· Low Qg.
Package Dimensions
unit:mm 2083B
[2SK2616]
1.5
6.5 5.0 4 2.3 0.5
0.85 0.7
5.5
7.0
0.8 1.6
1.2
0.6 1 2 3
7.5
0.5
2.3
2.3
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP
unit:mm 2092B
[2SK2616]
6.5 5.0 4 2.3
1.5
0.5
5.5
7.0
0.85 1 0.6
0.5
0.8
2
3
2.5
1.2
1.2 0 to 0.2
2.3
2.3
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s cont.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2610 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK2611 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK2611 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET | |
4 | 2SK2611 |
INCHANGE |
N-Channel MOSFET | |
5 | 2SK2611 |
nELL |
N-Channel Power MOSFET | |
6 | 2SK2613 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK2614 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2615 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK2617ALS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK2617LS |
Sanyo Semicon Device |
N-Channl Silicon MOSFET | |
11 | 2SK2618ALS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2618LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |