2SK2617ALS - Sanyo Semicon Device

2SK2617ALS N-Channel Silicon MOSFET

www.DataSheet4U.com Ordering number : ENA0361A 2SK2617ALS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS Features • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Dra.

Features

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• General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse)
*3 Avalanche Current
*4 Symbol VDSS VGSS IDc
*1 IDpack
*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition) Conditions .