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www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ïYfsï = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V.
mal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 W, IAR = 8 A Note 3: Repetitive rating: Pulse width limited by max junction temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 2SK2613 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2610 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK2611 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | 2SK2611 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2611 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | 2SK2611 |
nELL |
N-Channel Power MOSFET |
|
| 6 | 2SK2614 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | 2SK2615 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 8 | 2SK2616 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 9 | 2SK2617ALS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | 2SK2617LS |
Sanyo Semicon Device |
N-Channl Silicon MOSFET |
|
| 11 | 2SK2618ALS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 12 | 2SK2618LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|