2SK2597 - NEC

2SK2597 N-Channel MOSFET

PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) • Low intermodulation distortion • Covers all base station freque.

Features

• High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)
• Low intermodulation distortion
• Covers all base station frequencies such as 800-MHz PDC and GSM
• High-reliability gold electrodes
• Hermetic sealed package
• Internal matching circuit
• Push-pull structure PACKAGE DRAWING (Unit: mm) 45˚ G1 S G2 45˚ φ 3.3±0.3 11.4±0.3 19.4±0.4 D1 D2 1.4 3.2±0.2 ±0.3 3.2±0.2 13.5±0.3 28.0±0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current (D.C.) Total power dissipation Thermal resistance.