2SK2596 - Renesas Technology

2SK2596 Silicon N-Channel MOSFET

www.DataSheet4U.com 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 (Previous ADE-208-1367(Z)) Rev.3.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting Outline PLZZ0004CA-A (Previous code : UPAK) D 2 3 G 1 1.

Features

• High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz)
• Compact package capable of surface mounting Outline PLZZ0004CA-A (Previous code : UPAK) D 2 3 G 1 1. Gate 2. Source 3. Drain 4. Source 4 S Note: Marking is “BX“. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. V.