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2SK2590 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2590 Absolute Maximum Ratings (T.
•
•
•
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• Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SK2590
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 200 ±20 7 28 7 .
2SK2590 - Inchange Semiconductor
·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variati.
2SK2590 - Renesas
2SK2590 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK259 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK2593 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | 2SK2595 |
Renesas Technology |
Silicon N-Channel MOSFET |
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| 4 | 2SK2595 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK2596 |
Renesas Technology |
Silicon N-Channel MOSFET |
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| 6 | 2SK2597 |
NEC |
N-Channel MOSFET |
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| 7 | 2SK2598 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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| 8 | 2SK2599 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | 2SK2503 |
Rohm |
Small switching Transistors |
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| 10 | 2SK2503 |
Guangdong Kexin Industrial |
Silicon N-Channel MOSFET |
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| 11 | 2SK2503 |
TY Semiconductor |
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| 12 | 2SK2504 |
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|