2SK2373 - Hitachi Semiconductor

2SK2373 N-Channel MOSFET

2SK2373 Silicon N-Channel MOS FET ADE-208-268 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 2.

Features

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• Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. Marking is “ZE
  –”. Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 30 ±20 0.2 0.4 0.2 150 150
  –55 to +1.