Power F-MOS FETs 2SK2374 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
15.5±0.5
4.5
φ3.2±0.1
10.0
3.0±0.3
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
5˚
26.5±0.5
5˚
23.4 22.0±0.5
2.0 1.2
5˚
18.6±0.5
5˚ 5˚
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings 900 ±30 ±5 ±10 45 100 3 150 −.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2370 |
NEC |
N-Channel MOSFET | |
2 | 2SK2371 |
NEC |
N-Channel MOSFET | |
3 | 2SK2372 |
NEC |
N-Channel MOSFET | |
4 | 2SK2373 |
Hitachi Semiconductor |
N-Channel MOSFET | |
5 | 2SK2375 |
Panasonic Semiconductor |
N-Channel MOSFET | |
6 | 2SK2376 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK2377 |
Panasonic |
Silicon N-Channel Power F-MOS | |
8 | 2SK2378 |
Sanyo Semicon Device |
N-channel Silicon MOSFET | |
9 | 2SK2379 |
Sanyo Semicon Device |
N-channel Silicon MOSFET | |
10 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK2312 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2313 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |