2SK2356 |
Part Number | 2SK2356 |
Manufacturer | NEC |
Description | The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.... |
Features |
6.0 MAX.
• Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ±30 ± 5.0 ±20 50 1.5 150 5.0 17.4 V V A A W 1.3 ±0.2 0.75 ±0.1 2.54 0.5 ±0.2 2.8 ±0.2 2.54 1. Gate 2. Drain 3. Source 4... |
Document |
2SK2356 Data Sheet
PDF 65.27KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK2350 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2350 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK2351 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK2352 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK2352 |
Toshiba |
Silicon N-Channel MOSFET |