2SK2348 - Sanyo Semicon Device

2SK2348 N-Channel Silicon MOSFET

Ordering number : EN5415A N-Channel Silicon MOSFET 2SK2348 High-Voltage, High-Speed Switching Applications Features • Low ON resistance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). Package Dimensions unit: mm 2131-TO-3JML [2SK2348] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-S.

Features

• Low ON resistance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process). Package Dimensions unit: mm 2131-TO-3JML [2SK2348] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML PW≤10µs, duty cycle≤1% Tc=25°C Ratings 1200 ±30 14 28 4.6 160 150
  –55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C .