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www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter • Avalanche Ratings Outline DPAK-2 4 4 1 23 D 12 3 1. Gate G 2. Dra.
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
• Avalanche Ratings
Outline
DPAK-2
4 4
1 23
D
12 3
1. Gate G 2. Drain
3. Source 4. Drain
S
November 1996
www.DataSheet4U.com
2SK2334(L), 2SK2334(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2334 |
Hitachi |
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| 2 | 2SK2334S |
Hitachi |
Silicon N-Channel MOSFET |
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| 3 | 2SK2330 |
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|
| 4 | 2SK2330L |
Hitachi |
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|
| 5 | 2SK2330S |
Hitachi |
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| 6 | 2SK2331 |
Toshiba Semiconductor |
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| 7 | 2SK2332 |
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| 8 | 2SK2333 |
Shindengen Electric Mfg.Co.Ltd |
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| 9 | 2SK2333 |
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| 10 | 2SK2339 |
Panasonic Semiconductor |
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| 11 | 2SK2311 |
Toshiba Semiconductor |
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| 12 | 2SK2312 |
Toshiba Semiconductor |
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|