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SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2333 ( F6F70HVX2 ) 700V 6A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. •œ Avalanche resistance guaranteed. APPLICATION •œ Switching power supply of AC 240V input OUTLINE DIME.
•œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.
•œ The static Rds(on) is small.
•œ The switching time is fast.
•œ Avalanche resistance guaranteed. APPLICATION
•œ Switching power supply of AC 240V input
OUTLINE DIMENSIONS
Case : FTO-220 (Unit : mm)
•œ High voltage power supply
•œ Inverter
RATINGS
•œAbsolute Maximum Ratings
• Tc i = 25
•Ž
•j Item Symbol Conditions Ratings Storage Temperature Tstg -55
•`150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 700 Gate-Source Voltage VGSS
•}30 ID 6 Continuous Drain Current
• DC
•j i Continuous Drain Current
•.
2SK2333 - Inchange Semiconductor
·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2330 |
Hitachi |
Silicon N-Channel MOS FET |
|
| 2 | 2SK2330L |
Hitachi |
Silicon N-Channel MOS FET |
|
| 3 | 2SK2330S |
Hitachi |
Silicon N-Channel MOS FET |
|
| 4 | 2SK2331 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 5 | 2SK2332 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 6 | 2SK2334 |
Hitachi |
Silicon N-Channel MOS FET |
|
| 7 | 2SK2334L |
Hitachi |
Silicon N-Channel MOSFET |
|
| 8 | 2SK2334S |
Hitachi |
Silicon N-Channel MOSFET |
|
| 9 | 2SK2339 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS |
|
| 10 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | 2SK2312 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 12 | 2SK2313 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|