www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate .
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• Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings
Outline
DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
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3
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2SK2334(L), 2SK2334(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2330 |
Hitachi |
Silicon N-Channel MOS FET | |
2 | 2SK2330L |
Hitachi |
Silicon N-Channel MOS FET | |
3 | 2SK2330S |
Hitachi |
Silicon N-Channel MOS FET | |
4 | 2SK2331 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK2332 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK2333 |
Shindengen Electric Mfg.Co.Ltd |
HVX-2 Series Power MOSFET | |
7 | 2SK2333 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK2334L |
Hitachi |
Silicon N-Channel MOSFET | |
9 | 2SK2334S |
Hitachi |
Silicon N-Channel MOSFET | |
10 | 2SK2339 |
Panasonic Semiconductor |
Silicon N-Channel Power F-MOS | |
11 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK2312 |
Toshiba Semiconductor |
N-Channel MOSFET |