2SK2082-01 - Inchange Semiconductor

2SK2082-01 N-Channel MOSFET Transistor

·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC Converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (.

Features

5℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward on-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 1mA VDS= VGS; ID=1mA IF= 2IDR ;VGS= 0 VGS= 10V; ID= 4.5A VGS= ±30V;VDS= 0 VDS= 900V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz VGS=10V; ID=9A; VDD=600V; RL=10Ω MIN TYPE MAX UNIT 9.