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2SK2081-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,6Ω 12A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - A.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,6Ω 12A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) .
2SK2081-01 - Inchange Semiconductor
·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK208 |
Toshiba Semiconductor |
Silicon N Channel Junction Type Field Effect Transistor |
|
| 2 | 2SK2080 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | 2SK2080-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK2080-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 5 | 2SK2082-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 6 | 2SK2082-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2SK2083 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 8 | 2SK2084 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 9 | 2SK2084L |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 10 | 2SK2084S |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 11 | 2SK2085 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 12 | 2SK2089 |
Toshiba |
N-Channel MOSFET |
|