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2SK2082-01 |
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| Part Number | 2SK2082-01 |
| Manufacturer | Fuji Electric |
| Description | 2SK2082-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 1,4Ω 9... |
| Features |
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
900V
1,4Ω
9A
150W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V... |
| Document |
 2SK2082-01 Data Sheet
PDF 214.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2082-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK208 |
Toshiba Semiconductor |
Silicon N Channel Junction Type Field Effect Transistor |
|
| 3 | 2SK2080 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | 2SK2080-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK2080-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|