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2SK2010 |
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| Part Number | 2SK2010 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package fac... |
| Features |
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2010] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-S... |
| Document |
 2SK2010 Data Sheet
PDF 87.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK2011 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 3 | 2SK2012 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 4 | 2SK2013 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 5 | 2SK2015 |
Panasonic |
Silicon N-Channel MOSFET |
|