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2SK2018-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum R.
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 60V 0,1Ω 10A 20W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Ra.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2018-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK2010 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK2010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK2011 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 5 | 2SK2012 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 6 | 2SK2013 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 7 | 2SK2015 |
Panasonic |
Silicon N-Channel MOSFET |
|
| 8 | 2SK2016 |
Panasonic |
Silicon N-Channel Power F-MOS |
|
| 9 | 2SK2019-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 10 | 2SK2019-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
| 12 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|