2SK2019-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 3Ω 3,5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Abs.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 3Ω 3,5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V .
·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot vari.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2010 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
2 | 2SK2010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK2011 |
Sanyo Semicon Device |
N-Channel MOSFET | |
4 | 2SK2012 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK2013 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
6 | 2SK2015 |
Panasonic |
Silicon N-Channel MOSFET | |
7 | 2SK2016 |
Panasonic |
Silicon N-Channel Power F-MOS | |
8 | 2SK2018-01L |
Fuji Electric |
N-channel MOS-FET | |
9 | 2SK2018-01S |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2000-R |
Fuji Electric |
Power MOSFET | |
11 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET |