Ordering number:EN4204 N-Channel Silicon MOSFET 2SK1888 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1888] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absol.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SK1888]
4.5 10.0 2.8 3.2
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
2.55
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Conditions PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature Storage Temperature
PD Tc=25°C Tch Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Sou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1880 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1880L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1880S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1881-L |
Fuji Electric |
N-channel MOS-FET | |
5 | 2SK1881-S |
Fuji Electric |
N-channel MOS-FET | |
6 | 2SK1886 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK1887 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK1889 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor | |
10 | 2SK180 |
Yoshino International |
Power FET | |
11 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET |