2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc.
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•
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• Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK1880(L), 2SK1880(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 600 ±30 1.5 3.0 1.5 20 150
–55 to +150
Unit V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1880L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1880S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1881-L |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK1881-S |
Fuji Electric |
N-channel MOS-FET | |
5 | 2SK1886 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1887 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK1888 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK1889 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor | |
10 | 2SK180 |
Yoshino International |
Power FET | |
11 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET |