2SK1880L - Hitachi Semiconductor

2SK1880L Silicon N-Channel MOSFET

2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc.

Features

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• Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 600 ±30 1.5 3.0 1.5 20 150
  –55 to +150 Unit V.