2SK1881-L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,07Ω 20A 45W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), u.
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,07Ω 20A 45W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 60 60 20 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1881-L |
Fuji Electric |
N-channel MOS-FET | |
2 | 2SK1880 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1880L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1880S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1886 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1887 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK1888 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK1889 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor | |
10 | 2SK180 |
Yoshino International |
Power FET | |
11 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET |