Ordering number:EN3554 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1416 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1416] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-S.
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1416
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1416]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1410 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK1411 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK1412 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | 2SK1413 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK1414 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1417 |
VBsemi |
N-Channel MOSFET | |
7 | 2SK1417 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK1418 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK1419 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK1400 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1400A |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK1401 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |