2SK1400 - Hitachi Semiconductor

2SK1400 Silicon N-Channel MOSFET

2SK1400, 2SK1400A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 2.

Features

•
•
•
•
• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1400, 2SK1400A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1400 2SK1400A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Symbol VDSS Ratings .