·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(T.
ource On-stage Resistance VGS=10V; ID=10A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 2SK1411 MIN TYP MAX UNIT 500 V 2.0 3.0 4.0 V 0.30 Ω ±100 nA 500 uA Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized qua.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1410 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK1412 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK1413 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | 2SK1414 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK1416 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1417 |
VBsemi |
N-Channel MOSFET | |
7 | 2SK1417 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK1418 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK1419 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK1400 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1400A |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK1401 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |