·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±.
Gate Threshold Voltage VDS= 0V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=8A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 2SK1410 MIN TYP MAX UNIT 500 V 2.0 3.0 4.0 V 0.40 Ω ±100 nA 500 uA Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not des.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1411 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK1412 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK1413 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | 2SK1414 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | 2SK1416 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1417 |
VBsemi |
N-Channel MOSFET | |
7 | 2SK1417 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK1418 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK1419 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK1400 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1400A |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK1401 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |