2SK1330A - Inchange Semiconductor

2SK1330A N-Channel MOSFET Transistor

·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT DSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±20 .

Features

Threshold Voltage VDS=25V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=5A; RL=40Ω 2SK1330A MIN TYP MAX UNIT 900 V 1.0 5.0 V 1.4 1.8 Ω ±1 uA 0.1 m A 110 ns 420 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are i.