2SK1330A |
Part Number | 2SK1330A |
Manufacturer | Inchange Semiconductor |
Description | ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high... |
Features |
Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=640V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=5A; RL=40Ω
2SK1330A
MIN TYP MAX UNIT
900
V
1.0
5.0
V
1.4
1.8
Ω
±1
uA
0.1 m A
110
ns
420
ns
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are i... |
Document |
2SK1330A Data Sheet
PDF 194.99KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK1330 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK133 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1331 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK1332 |
Sanyo Semicon Device |
Silicon N-Channel MOSFET | |
5 | 2SK1334 |
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