2SK1334 - Hitachi Semiconductor

2SK1334 Silicon N-Channel MOSFET

2SK1334 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK1334 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source.

Features

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• Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK1334 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 200 ±20 1 2 1 1 150
  –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1.