2SK1336 - Hitachi Semiconductor

2SK1336 Silicon N-Channel MOSFET

2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D G 32 1 1. Source 2. Drain 3. Gate S 2SK1336 Absolute Maxi.

Features

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• Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D G 32 1 1. Source 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)
* I DR Pch Tch Tstg 1 Ratings 60 ±20 0.3 1.2.