2SK1189 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 20 ± 15 ± 60 (Tch 150ºC) (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss t on t off 2.0 4.2 6.2 0.07 640 350 110 45 0.1 min 60 ± 500 250 4.0 Ratings typ max Unit V nA µA V S Ω pF p.
2 25ºC 125ºC
0.02 0
0
2
4
6
8
10
12
14
16
VDS (V)
VGS (V)
I D (A)
I D — Re (yfs) Characteristics
20 VDS = 10V 10 TC =
– 55ºC 25ºC 125ºC 3
VGS — VDS Characteristics
0.14 0.12 0.10
TC — RDS (ON) Characteristics
ID = 8A VGS =10V
RDS (ON) (Ω)
Re (yfs) (S)
5
VDS (V)
2
0.08 0.06 0.04 0.02
1 0.5 0.3 0.05 0.1
1
ID = 15A ID = 8A
0 0.5 1 5 10 20 5 10 20
0
–50
0
50
100
150
I D (A)
VGS (V)
Tc (ºC)
VDS — Capacitance Characteristics
3000 VGS = 0V f = 1MHz Ciss 10 14 12
VSD — I DR Characteristics
100 50
Safe Operating Area
ID (pulse) max
R D IM ID max L
S N) (O
(Tc = 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK118 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK1180 |
Sanken electric |
MOSFET | |
3 | 2SK1180 |
INCHANGE |
N-Channel MOSFET | |
4 | 2SK1181 |
Sanken electric |
MOSFET | |
5 | 2SK1183 |
Sanken electric |
MOSFET | |
6 | 2SK1184 |
Sanken electric |
MOSFET | |
7 | 2SK1185 |
Sanken electric |
MOSFET | |
8 | 2SK1186 |
Sanken electric |
MOSFET | |
9 | 2SK1187 |
Sanken electric |
MOSFET | |
10 | 2SK1188 |
Sanken electric |
MOSFET | |
11 | 2SK11 |
Toshiba |
Silicon N-Channel Transistor | |
12 | 2SK1101-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |