·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage,high speed applications, ·Chopper regulator,DC-DC converter and motor drive applications. ABSOLUTE MAXIMUM.
DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS=VGS,ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=5A IGSS Gate Source Leakage Current IDSS Zero Gate Voltage Drain Current VGS= ±20 V; VDS= 0 VDS=500V; VGS= 0 VSD Diode Forward Voltage IS=5A; VGS=0 2SK1180 MIN MAX UNIT 500 V 2 4 V 0.6 Ω ±500 nA 250 μA 1.5 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of .
2SK1180 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 500 ± 20 ± 10 ± 40 (Tch 150ºC) (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK118 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK1181 |
Sanken electric |
MOSFET | |
3 | 2SK1183 |
Sanken electric |
MOSFET | |
4 | 2SK1184 |
Sanken electric |
MOSFET | |
5 | 2SK1185 |
Sanken electric |
MOSFET | |
6 | 2SK1186 |
Sanken electric |
MOSFET | |
7 | 2SK1187 |
Sanken electric |
MOSFET | |
8 | 2SK1188 |
Sanken electric |
MOSFET | |
9 | 2SK1189 |
Sanken electric |
MOSFET | |
10 | 2SK11 |
Toshiba |
Silicon N-Channel Transistor | |
11 | 2SK1101-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET | |
12 | 2SK1102-01M |
ETC |
N-CHANNEL SILICON POWER MOS-FET |