2SK1187 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 100 ± 20 ± 12 ± 48 (Tch 150ºC) (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss t on t off 2.0 4.4 6.5 0.12 650 240 70 55 0.16 min 100 ± 500 250 4.0 Ratings typ max Unit V nA µA V S Ω pF.
0
0
2
4
6
8
10
12
VDS (V)
VGS (V)
I D (A)
I D — Re (yfs) Characteristics
20 VDS = 10V 10 TC =
– 55ºC 25ºC 125ºC 6
VGS — VDS Characteristics
0.4
TC — RDS (ON) Characteristics
ID = 6A VGS =10V 0.3
RDS (ON) (Ω)
ID =12A ID = 6A
Re (yfs) (S)
5
4
VDS (V)
0.2
1 0.5 0.3 0.05 0.1
2
0.1
0 0.5 1 5 10 20 5 10 20
0
–50
0
50
100
150
I D (A)
VGS (V)
Tc (ºC)
VDS — Capacitance Characteristics
3000 12 VGS = 0V f = 1MHz Ciss 8 10
VSD — I DR Characteristics
50
Safe Operating Area
ID (pulse) max ED IT ID max LIM
RD
S ( ) ON
Capacitance (pF)
1000 500
10
PD (W)
I DR (A)
5
I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK118 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK1180 |
Sanken electric |
MOSFET | |
3 | 2SK1180 |
INCHANGE |
N-Channel MOSFET | |
4 | 2SK1181 |
Sanken electric |
MOSFET | |
5 | 2SK1183 |
Sanken electric |
MOSFET | |
6 | 2SK1184 |
Sanken electric |
MOSFET | |
7 | 2SK1185 |
Sanken electric |
MOSFET | |
8 | 2SK1186 |
Sanken electric |
MOSFET | |
9 | 2SK1188 |
Sanken electric |
MOSFET | |
10 | 2SK1189 |
Sanken electric |
MOSFET | |
11 | 2SK11 |
Toshiba |
Silicon N-Channel Transistor | |
12 | 2SK1101-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |