2SK118 - Toshiba Semiconductor

2SK118 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK118 Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package Absolute Maximum Rating.

Features

he appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS = −30 V, VDS = 0 V (BR) GDS VDS = 0, IG = −100 μA IDSS (Note) .