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Ordering number:EN3439 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1052] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage .
· Low ON-state resistance.
· Ultrahigh-speed switching.
N-Channel Silicon MOSFET
2SK1052
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1052]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Par.
2SK1052 - Inchange Semiconductor
·Drain Current –ID=0.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot varia.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK105 |
NEC |
N-Channel FET |
|
| 2 | 2SK1053 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK1053 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1056 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1056 |
Renesas |
N-Channel MOSFET |
|
| 6 | 2SK1057 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | 2SK1057 |
Renesas |
N-Channel MOSFET |
|
| 8 | 2SK1058 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | 2SK1058 |
Renesas |
N-Channel MOSFET |
|
| 10 | 2SK1059 |
NEC |
N-Channel MOS Field Effect Power Transistors |
|
| 11 | 2SK1059-Z |
NEC |
N-Channel MOS Field Effect Power Transistors |
|
| 12 | 2SK1006 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|