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2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio powe.
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• Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
Outline
TO-3P
D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C VGSS ID I DR Pch
* Tch Tstg
1
Sym.
2SK1056 - Renesas
2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00 Sep 07, 2005 Appl.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK105 |
NEC |
N-Channel FET |
|
| 2 | 2SK1052 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK1052 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1053 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 5 | 2SK1053 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1057 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | 2SK1057 |
Renesas |
N-Channel MOSFET |
|
| 8 | 2SK1058 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | 2SK1058 |
Renesas |
N-Channel MOSFET |
|
| 10 | 2SK1059 |
NEC |
N-Channel MOS Field Effect Power Transistors |
|
| 11 | 2SK1059-Z |
NEC |
N-Channel MOS Field Effect Power Transistors |
|
| 12 | 2SK1006 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|