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·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25.
25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=0.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 VSD Forward On-Voltage IS=1A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=0.5A; RL=50Ω toff Turn-off time 2SK1053 MIN TYP. MAX UNIT 450 V 2.0 3.0 V 3.5 4.5 Ω ±100 nA 1 mA 1.8 V 9 ns 19 ns 50 ns 95 ns Notice： ISC reserves the rights to.
2SK1053 - Sanyo Semicon Device
Ordering number:EN3440 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK105.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK105 |
NEC |
N-Channel FET |
|
| 2 | 2SK1052 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK1052 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1056 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1056 |
Renesas |
N-Channel MOSFET |
|
| 6 | 2SK1057 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | 2SK1057 |
Renesas |
N-Channel MOSFET |
|
| 8 | 2SK1058 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | 2SK1058 |
Renesas |
N-Channel MOSFET |
|
| 10 | 2SK1059 |
NEC |
N-Channel MOS Field Effect Power Transistors |
|
| 11 | 2SK1059-Z |
NEC |
N-Channel MOS Field Effect Power Transistors |
|
| 12 | 2SK1006 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|